STH315N10F7特性：被设计用于汽车应用，符合AEC-Q101标准要求；超低导通电阻；100%经雪崩测试

STH315N10F7参考设计应用电路：

图1STH315N10F7内部结构图

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

STH315N10F7中文数据手册:点击下载

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